(nC)įollow the link below for more on the new product.įollow the link below for more on Toshiba’s MOSFETs.
#Driverpack solution toshiba plus#
Total gate charge (gate-source plus gate-drain) Q g typ. The circuit for connecting and disconnecting components to a system without shutting down the system while the equipment is in operation. High channel temperature rating : T ch (max)=175☌ Switching power supplies (High efficiency DC-DC converters, etc.)įeaturing Industry-leading excellent low On-resistance : R DS(ON)=3.1mΩ (max) (V GS=10V)
Power supplies for communications equipment such as for data centers and communications base stations Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption. The new product uses the highly footprint compatible SOP Advance(N) package. Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76% making it suitable for linear mode operation. TPH3R10AQM has industry-leading 3.1mΩ maximum drain-source On-resistance, 16% lower than Toshiba’s 100V product, “ TPH3R70APL,” which uses the earlier generation process. The product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centers and communications base stations.
KAWASAKI, Japan-( BUSINESS WIRE)- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “ TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation process, U-MOS X-H.
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